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A Product Line of
Diodes Incorporated
ZXMP6A17DN8
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source voltage
Gate-Source voltage
Characteristic
(Notes 7 & 9)
Symbol
V DSS
V GS
Value
-60
? 20
-3.42
Unit
V
V
Continuous Drain current
V GS = 10V
T A = +70oC
(Notes 7 & 9)
I D
-2.73
A
(Notes 6 & 9)
-2.7
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
I DM
I S
I SM
-15.6
-3.4
-15.6
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 9)
Symbol
Value
1.25
10.0
Unit
Power dissipation
Linear derating factor
(Notes 6 & 10)
P D
1.81
14.5
W
mW/°C
(Notes 7 & 9)
(Notes 6 & 9)
2.15
17
100
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
R θ JA
R θ JL
T J , T STG
70
60
51.68
-55 to 150
°C/W
°C
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t ? 10 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.
ZXMP6A17DN8
Document Number DS33588 Rev 4 - 2
2 of 8
www.diodes.com
August 2013
? Diodes Incorporated
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